Renesas Launches Innovative 650V GaN Device for AI Data Centers
Renesas Electronics Corporation, a leading provider of semiconductor solutions, has introduced an advanced 650V gallium nitride (GaN) device designed specifically for high-performance AI data centers. This new product, known as the TP65H020G4PLSGBD, features a unique dual-side cooling system that significantly enhances power conversion efficiency within 800V high-voltage direct current (HVDC) architectures.
The TP65H020G4PLSGBD is notable for its incredibly low on-resistance of just 20 milliohms, making it one of the most efficient devices available. It comes in a compact package that not only saves space but also allows for better heat management. This dual-side-cooled design helps maintain optimal performance in environments where power demand is rapidly increasing.
Designed using Renesas’s Gen IV Plus GaN technology, this device is made to meet the high-energy requirements of next-generation AI data centers that operate up to 700 volts. It is particularly suited for the DC/DC converter stage, which steps down voltage to 48V, 12V, or 6V, as well as for battery backup systems.
As the power needs of data centers continue to grow—moving from around 120 kilowatts to megawatt levels—managing heat and available space becomes increasingly challenging. The new device stands out because it can dissipate heat from both the top and bottom, reducing thermal resistance and allowing for more efficient operation. Additionally, its footprint is 57% smaller compared to traditional packages, making it an ideal choice for compact designs.
This device also integrates several advanced features from Renesas’s GaN technology, such as low gate charge and output capacitance. It includes a built-in diode that minimizes reverse recovery time, and it operates efficiently without requiring a negative gate bias. The device can be easily driven using standard silicon gate drivers, making it accessible for engineers and helping reduce overall costs.
“Customers building large-scale AI data centers often face constraints with board space and thermal management,” said John Wiggenhorn, Senior Product Line Director of High-Voltage GaN at Renesas. “Our new dual-side-cooled 650V GaN device provides effective cooling and a smaller footprint, allowing designers to enhance power flow without the need for extensive redesigns.”
The new GaN package has been developed in partnership with leading AI infrastructure providers, ensuring that it meets industry standards for easy integration. When used with Renesas’s auxiliary controllers, gate drivers, and microcontrollers, this device offers a complete power management solution for companies transitioning to 800V systems.
Renesas has tested this approach, demonstrating promising results with a reference design that achieves a power density of 2.6 kW/in³. Initial tests showed that this new design outperformed existing solutions, enhancing energy efficiency and maximizing space on circuit boards.
The TP65H020G4PLSGBD GaN device will be featured at the OCP Global Summit from October 12-15 in San Jose, California, highlighting its capabilities within Renesas’s new 800V power solutions.
Availability
Currently, the TP65H020G4PLSGBD is available for sampling, with plans for mass production slated for mid-2027. More details about Renesas’s GaN solutions can be found on their official website.
About Renesas
Renesas is dedicated to innovation and quality in power electronics, producing over four billion components each year across various sectors, including automotive, IoT, infrastructure, and industrial applications. Their power products are designed to integrate seamlessly with microcontrollers and other solutions, streamlining the design process for engineers. For additional information, you can explore their extensive portfolio on their website.
