Renesas Electronics Launches Innovative 650V GaN Device for AI Data Centers
Renesas Electronics Corporation, a leading provider of advanced semiconductor solutions, has introduced the first-ever 650V Gallium Nitride (GaN) device that features dual-side cooling. This groundbreaking development is designed to enhance power conversion in 800V high-voltage direct current (HVDC) architectures specifically for data centers powered by artificial intelligence. The new device, known as the TP65H020G4PLSGBD D-Mode, boasts an impressive on-resistance of just 20 milliohms (mΩ), making it one of the most efficient in its category. With its compact size and dual-side cooling capabilities, it enables handling of high power in a much smaller footprint.
The device is built on the latest Gen IV Plus GaN architecture and is specifically engineered to meet the rising energy demands of next-generation AI data centers that operate at up to 700V. It primarily targets the DC/DC intermediate bus converter (IBC) stage, which steps down voltage to 48V, 12V, or 6V, along with supporting battery backup and capacitor bank stages.
As power requirements for data center racks increase from about 120 kW to megawatt levels, managing space and heat has become crucial. The innovative dual-side cooling technology allows heat to dissipate from both the top and bottom of the device, reducing the thermal impedance by 10%. Furthermore, its 8 x 8 mm footprint is 57% smaller than the existing 10 x 15 mm TOLT package.
This new device harnesses the full power of Renesas’ Gen IV Plus 650V GaN technology, featuring low gate charge and output capacitance, a built-in freewheeling diode with minimal reverse recovery time, and the ability to operate without a negative gate bias. This makes it easy for engineers to use existing silicon gate drivers while achieving high-frequency operation, which helps reduce the number of passive components and lowers overall costs.
John Wiggenhorn, Senior Product Line Director of High-Voltage GaN at Renesas, stated, “Customers creating large-scale AI data centers are facing challenges with board space and temperature management as they push their power limits. Our dual-side-cooled 650V GaN solution reduces the physical footprint and enhances cooling efficiency, allowing designers to manage more power without needing to redesign their boards or add extra cooling solutions.”
The new dual-side-cooled package was developed in collaboration with major AI infrastructure players to ensure a standard footprint that allows for flexible sourcing options. When used together with Renesas AUX controllers, gate drivers, and microcontrollers, this GaN device offers a comprehensive power solution for original equipment manufacturers (OEMs), original design manufacturers (ODMs), and data center operators transitioning to 800V systems.
Renesas has validated this technology in real-world applications. For instance, a 6kW, 800V-to-48V LLC DC transformer reference design based on this new device, controlled by a Renesas RA6T3 microcontroller, demonstrated high power density and efficiency, proving to be 0.21% more efficient than a similar TOLT-based setup. This compact design also optimizes PCB space usage and improves layout design across the FETs.
Renesas plans to showcase the TP65H020G4PLSGBD GaN device at the OCP Global Summit from October 12-15 in San Jose, California.
Availability
The TP65H020G4PLSGBD is currently available for sampling, with mass production expected to commence in mid-2027. More details about Renesas’ GaN solutions can be found on their website.
About Renesas
Renesas is renowned for its commitment to innovation, quality, and reliability in power electronics, delivering over four billion parts annually from a diverse range of power management integrated circuits, discrete and wide-bandgap GaN products, and devices for various industries including automotive, IoT, and industrial sectors. Renesas’ power solutions integrate seamlessly with its leading microcontrollers, microprocessors, and system-on-chip products, simplifying the design process for engineers with reliable combinations of technologies and resources.
